Description
Specifications:
- Silicon Wafer
- Type: N/ P doped
- Orientation: (100)
- Size: 4'' dia
- Thickness: 500 - 550 um
- Grade: Prime
- Flates: 2 SEMI-STD on Axis 0 degree off
- Resistivity: 1-10 ohm.cm
- Backside: Etch
- Particles: < 50 @ >0.20 um
- TDD: <1E8 cm^2
- Film: Ge epi-film
- Thickness: 0.5 um +/- 3%
- Orientation: (100)
- Type: N-type
- Dopant concentration: ~5E18 /cc
- Current RMS spec: Ra < 2 nm
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