Description
SPECIFICATIONS
Film:
- 4H-SiC (0001)
- Film target thickness: 4.3 microns with (thickness acceptation range) +/- 10%
- Film target doping layer: 1.4E17/cc with (doping acceptation range) +0% /- 30%
- Conductive Type P type with
- Surface finish Both sides will be polished after deposition, Both Front and Backside Epiwafer polishing with Ra or RMS < 5 Angstrom
Substrate:
- 4H-SiC (0001) Prime grade
- Off axis: miscut 8.0 +/- 0.5 degree
- Prime Grade: with FWHM 20 arc second
- OF orientation: parallel {10-10} +/- 5 degree
- OF length: 15.9 +/- 1.7 mm
- IF orientation: 90 degree cw. from OF +/- 5 degree
- IF length: 8.0 +/- 1.7 mm
- Diameter: 50.8 +/- 0.38 mm
- Thickness: 330 +/- 25 um
- Resistivity: < 0.03 ohm-cm
- Edge exclusion: 1mm
- Two sides polished with Si-face CMP with average roughness: Ra < 0.2 RMS
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