GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US

GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US

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GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US
  • GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US
GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US

GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.485mm, 1sp, Prime Grade - GATea50D0485C1deg2US

SKU: gaas-100-orientation-2-deg-off-toward-101-0-5-deg-te-doped-n-type-2-dia-x-0-485mm-1sp-prime-grade-gatea50d0485c1deg2us

Price: RFQ

Description
  • GaAs single crystal wafer, PRIME Grade
  • Growing Method: VGF
  • Orientation: (100) 2 degree OFF Toward [101] +/- 0.5 deg
  • Size: 2" dia x 0.485mm
  • Polishing: One  side polished
  • Doping: Te doped
  • Conductor type: N-type
  • Carrier Concentration: (0.1-0.6) x 10^18 /cm^3
  • Mobility: 3500-3600 cm^2/V.S
  • Resistivity: (2.9-10.7) E-3 ohm-cm
  • EPD: <8000/cm^2
  • Note: EPI polishing: RMS < 5 Angstrom


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