GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp, Prime Grade - GATea50D05C1deg2US

GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp, Prime Grade - GATea50D05C1deg2US

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GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp, Prime Grade - GATea50D05C1deg2US
  • GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp, Prime Grade - GATea50D05C1deg2US
GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp, Prime Grade - GATea50D05C1deg2US

GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te doped, N-type, 2" dia x 0.5mm, 1sp, Prime Grade - GATea50D05C1deg2US

SKU: gaas-100-orientation-2-deg-off-toward-101-0-5-deg-te-doped-n-type-2-dia-x-0-5mm-1sp-prime-grade-gatea50d05c1deg2us

Price: RFQ

Description
  • GaAs single crystal wafer, PRIME Grade
  • Growing Method: VGF
  • Orientation: (100) 2 degree OFF Toward [101] +/- 0.5 deg
  • Size: 2" dia x 0.5mm
  • Polishing: One  side polished
  • Doping: Te doped
  • Conductor type: N-type
  • Carrier Concentration: (0.15-2.6) E18 /cm^3
  • Mobility: 2700~3600 cm^2/V.S
  • Resistivity: 9E-4~1.1E-2 ohm-cm
  • EPD: <8000/cm^2
  • Note: EPI polishing: RMS < 5 Angstrom


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