Description
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (111)B
- Primary Flat: EJ(0-11)+/- 0.5 deg;
- Secondary Flat: EJ(-211)
- Size: 10X10 x 0.625mm
- Polishing: One side polished
- Doping: undoped
- Conductor type: Semi-Insulating
- Resistivity:(1.57-3.86)E8 ohm.cm
- Carrier Concentration: N/A
- Mobility: (4120-5860) cm^2/V.S
- EPD: N/A
- Ra(Average Roughness) : < 0.4 nm
