GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 2sp

GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 2sp

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GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 2sp
  • GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 2sp
GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 2sp

GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, 2sp

SKU: gaas-growing-method-vgf-100-si-doped-n-type-2-dia-x-0-35mm-2sp

Price: RFQ

Description
  • GaAs single crystal wafer
  • Growing Method: VGF
  • Orientation: (100)
  • Size: 2" dia x 0.35 mm
  • Polishing: Two sides polished
  • Doping: Si doped
  • Conductor type: N-type
  • Carrier Concentration: (1.60-3.94) E18 /cm^3
  • Mobility: (1400-2100) cm^2/V.S
  • Resistivity: (1.08-1.90) E-3  ohm.cm
  • EPD: < 500cm^2
  • Ra(Average Roughness) : < 0.4 nm
  • EPI ready surface and packing 


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