GaAs, Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, 2sp, Carrier Concentration: (1.4-3.96) x 10^18 /cm^3 - GASia76D0625C2US5

GaAs, Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, 2sp, Carrier Concentration: (1.4-3.96) x 10^18 /cm^3 - GASia76D0625C2US5

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GaAs, Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, 2sp, Carrier Concentration: (1.4-3.96) x 10^18 /cm^3 - GASia76D0625C2US5
  • GaAs, Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, 2sp, Carrier Concentration: (1.4-3.96) x 10^18 /cm^3 - GASia76D0625C2US5
GaAs, Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, 2sp, Carrier Concentration: (1.4-3.96) x 10^18 /cm^3 - GASia76D0625C2US5

GaAs, Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, 2sp, Carrier Concentration: (1.4-3.96) x 10^18 /cm^3 - GASia76D0625C2US5

SKU: gaas-growing-method-vgf100-si-doped-n-type-3-dia-x-0-625mm-2sp-carrier-concentration-1-4-3-96-x-10-18-cm-3-gasia76d0625c2us5

Price: RFQ

Description
  • GaAs single crystal wafer
  • Growing Method: VGF
  • Orientation: (100)+/- 0.5 degree
  • Size: 3"  dia x 0.625mm
  • Polishing: two  sides  polished
  • Doping: Si doped
  • Conductor type: S-C-N
  • Carrier Concentration: (1.06-3.96) x 10^18/cm^3
  • Mobility: 1420-2480 cm^2/V.S
  • Resistivity: (1.1-2.38) E-3  ohm.cm
  • EPD: <1000cm^2
  • Ra(Average Roughness) : < 0.4 nm
  • EPI ready surface and packing 


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