Description
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (110)
- Size: 20x20x0.5mm
- Polishing: One side polished
- Doping: un-doped
- Conductor type: S-I
- Mobility: 3990-5030 cm^2/V.S
- Resistivity :( 2.5-5.1)x10^8 ohm.cm
- Ra(Average Roughness) : < 0.4 nm
- Note: EPI ready wafers
