GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 1sp,

Specification

• Growing Method: CZ
• Orientation: (110) +/_0.5 Deg.
• Wafer Size: 3" dia x  0.5 mm 
• Surface Polishing: one side optical polished
• Surface finish (RMS or Ra) :  < 30A
• Doping: Undoped
• Conductor type: N-type
• Resistivity: >50 Ohms/cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
• Package: under 1000 class clean room     

 

Typical Properties:

• Structure: Cubic, a = 5.6754 A
• Density: 5.323 g/cm3 at room temperature
• Melting Point: 937.4 ^oC
• Thermal Conductivity: 640

 

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