Description
- GaAs single crystal wafer
- Growing Method: VGF
- Orientation: (100)+/-0.5 degree
- Size: 2" dia x 0.5mm
- Polishing: single side polished
- Doping: un- doped
- Conductor type: Semi-insulating
- Ra(Average Roughness) : < 0.4 nm
- Mobility: 4470-6540 cm^2/V.S
- Resistivity: (0.96-5.34) x 10^8 ohm.cm
- EPD: <5000cm^2
- EPI ready surface and packing
