GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 4"D x 0.6mm, 2SP, Mechanical Grade

• GaAs single crystal wafer,Mechanical Grade
  
• Growing Method: VGF
  
• Orientation: (100)
  
• Diameter: 4" dia
  
• Thickness: 0.6 mm +/- 0.05 mm
• Polishing: two sides polished; 

NOT EPI Ready wafer

• Doping: undoped
  
• Conductor type: Semi-Insulating
  
• Resistivity: N/A
  
• Mobility: N/A
• EPD: N/A
  
• PrimPrimary Flat: EJ(0-1-1)
• Minor Flat: EJ(0-11)
  
  

Other GaAs

InSb

Other InAs

InP

GaSb

Wafer Box

Film Coaters

RTP Furnaces