GaAs Wafer - Growing Method: VGF (100) Zn doped P-type, , 2"x0.5 mm, 1sp, (5.17-9.38) x 10^17 /cm^3

GaAs Wafer - Growing Method: VGF (100) Zn doped P-type, , 2"x0.5 mm, 1sp, (5.17-9.38) x 10^17 /cm^3

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GaAs Wafer - Growing Method: VGF (100) Zn doped P-type, , 2"x0.5 mm, 1sp, (5.17-9.38) x 10^17 /cm^3
  • GaAs Wafer - Growing Method: VGF (100) Zn doped P-type, , 2"x0.5 mm, 1sp, (5.17-9.38) x 10^17 /cm^3
GaAs Wafer - Growing Method: VGF (100) Zn doped P-type, , 2"x0.5 mm, 1sp, (5.17-9.38) x 10^17 /cm^3

GaAs Wafer - Growing Method: VGF (100) Zn doped P-type, , 2"x0.5 mm, 1sp, (5.17-9.38) x 10^17 /cm^3

SKU: gaas-wafer-growing-method-vgf-100-zn-doped-p-type-2x0-5-mm-1sp-5-17-9-38-x-10-17-cm-3

Price: RFQ

Description
  • GaAs single crystal wafer
  • Growing Method: VGF
  • Orientation: (100)
  • Size: 2" dia x 0.5mm
  • Polishing: one side polished
  • Doping: Zn doped
  • Conductor type: S-C-P
  • Carrier Concentration: (5.17-9.38) x 10^17 /cm^3
  • Mobility: 168-188 cm^2/V.S
  • EPD: <5000/cm^2
  • Resistivity: (3.96-6.67)x10^-2 ohm.cm
  • Ra(Average Roughness) : < 0.4 nm
  • Note: EPI ready wafers

 

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