GaAs Wafer - Growing Method: VGF (100), Zn doped, P-Type, 3"x0.5 mm, 1sp

GaAs Wafer - Growing Method: VGF (100), Zn doped, P-Type, 3"x0.5 mm, 1sp

RM0.00 MYR
RM0.00 MYR
Skip to product information
GaAs Wafer - Growing Method: VGF (100), Zn doped, P-Type, 3"x0.5 mm, 1sp
  • GaAs Wafer - Growing Method: VGF (100), Zn doped, P-Type, 3"x0.5 mm, 1sp
GaAs Wafer - Growing Method: VGF (100), Zn doped, P-Type, 3"x0.5 mm, 1sp

GaAs Wafer - Growing Method: VGF (100), Zn doped, P-Type, 3"x0.5 mm, 1sp

SKU: gaas-wafer-growing-method-vgf-100-zn-doped-p-type-3x0-5-mm-1sp

Price: RFQ

Description
  • GaAs single crystal wafer
  • Growing Method: VGF
  • Orientation: (100)
  • Size: 3" dia x 0.5mm
  • Polishing: one side polished
  • Doping: Zn doped
  • Conductor type: S-C-P
  • Carrier Concentration: (5.01-6.30) x 10^17 /cm^3
  • Mobility: 184-200cm^2/V.S
  • EPD: <5000/cm^2
  • resistivity: (5.14-6.67)x10^-2 ohm.cm
  • Ra(Average Roughness) : < 0.4 nm
  • Note: EPI ready wafers


Other GaAs


 		InSb

 		Other InAs

 		 InP 


 		GaSb

 		Wafer Box

 Film Coaters

 RTP Furnaces