GaAs Wafer - Growing Method: VGF (100) Zn doped Ptype, , 2"x0.35 mm, 1sp, CC: (2.67-3.27) x 10^18 /cm^3

GaAs Wafer - Growing Method: VGF (100) Zn doped Ptype, , 2"x0.35 mm, 1sp, CC: (2.67-3.27) x 10^18 /cm^3

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GaAs Wafer - Growing Method: VGF (100) Zn doped Ptype, , 2"x0.35 mm, 1sp, CC: (2.67-3.27) x 10^18 /cm^3
  • GaAs Wafer - Growing Method: VGF (100) Zn doped Ptype, , 2"x0.35 mm, 1sp, CC: (2.67-3.27) x 10^18 /cm^3
GaAs Wafer - Growing Method: VGF (100) Zn doped Ptype, , 2"x0.35 mm, 1sp, CC: (2.67-3.27) x 10^18 /cm^3

GaAs Wafer - Growing Method: VGF (100) Zn doped Ptype, , 2"x0.35 mm, 1sp, CC: (2.67-3.27) x 10^18 /cm^3

SKU: gaas-wafer-growing-method-vgf-100-zn-doped-ptype-2x0-35-mm-1sp-cc-2-67-3-27-x-10-18-cm-3

Price: RFQ

Description
  • GaAs single crystal wafer
  • Growing Method: VGF
  • Orientation: (100)
  • Size: 2" dia x 0.35mm
  • Polishing: one side polished
  • Doping: Zn doped
  • Conductor type: S-C-P
  • Carrier Concentration: (2.67-3.27) x 10^18 /cm^3
  • Mobility: 116-125 cm^2/V.S
  • EPD: <5000/cm^2
  • Resistivity: (1.64-1.88)x10^-2 ohm.cm
  • Ra(Average Roughness): < 0.4 nm
  • Note: EPI ready wafers


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