GaP wafer, S doped, (111) orientation, 2" dia x 0.5mm, 1sp - GPSc50D05C1

Typical Physical Properties

Crystal Structure

Cubic.            a =5.4505 ?/FONT>

Growth Method

CZ (LEC)

Density

4.13  g/cm³

Melt Point

1480  ^oC

Thermal Expansion

5.3 x10^-6  / ^oC

Dopant

S doped

undoped

Crystal growth axis

<111>  or <100>

<100> or <111>

Conducting Type

N

N

Carrier Concentration

0.4~ 8 x10¹⁷ /cm³

4 ~ 6 x10¹⁶ /cm³

Resistivity

~ 0.03 W-cm

~ 0.3 W-cm

EPD

< 3x10⁵

< 3x10⁵

Target  A-Z

Crystal Substrate A-Z

Plasma/UO Cleaner

Round Wafer Carriers

Cutting/Dicing Saws

Film Coaters