Ge (111), Flat-(1-10), N-type, Sb-doped, 10x10x0.5mm, 1sp, R:0.005-0.01 ohm.cm

Specifications

• Growth Method: CZ 

• Dimensions: 10 × 10 × 0.5 mm

• Orientation: (111)

• Primary Flat: (1-10)

• Polishing: One side epi-polished (1SP), surface roughness Ra ~10 Å

• Electrical Properties: N-type, Antimony (Sb)-doped, resistivity 0.005–0.01 Ω·cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)

• Package: under 1000 class clean room     

Typical Properties:

• Structure: Cubic, a = 5.6754 A
• Density: 5.323 g/cm3 at room temperature
• Melting Point: 937.4 ^oC
• Thermal Conductivity: 640

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