Ge Substrate (110)+/- 0.7 degree 5x5x0.5 mm, 1 SP,Sb-doped ,R:0.1-0.5 ohm.cm

Specifications

• Growing Method: CZ
• Wafer Size: 5x5x0.5 mm
• Surface Polishing: one side optical polished
• Orientation: (110) +/- 0.7 degree
• Surface finish (RMS or Ra) :  < 30A
• Doping: Sb-doped
• Conductor type: N-type
• Resistivity: 0.1-0.5 Ohms/cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
• EPD: N/A
• Package: under 1000 class clean room  in wafer container 

Typical Properties:

• Structure:                         Cubic, a = 5.6754 A
• Density:                            5.323 g/cm3 at room temperature
• Melting Point:                    937.4 ^oC
• Thermal Conductivity:         640

Target  A-Z	Crystal Substrate A-Z	Plasma/UO Cleaner	Round Wafer Carriers	Cutting/Dicing Saws	Film Coaters