Ge Substrate (110) 10x10x 0.4-0.5 mm, 2 SP, N-type Undoped, R>50 ohm.cm - GEUe101005S2R50

Specifications

• Growing Method: CZ
• Wafer Size: 10x10x0.4-0.5 mm
• Surface Polishing: two sides optical polished
• Orientation: (110)
• Surface finish (RMS or Ra) : < 30A
• Doping: Undoped
• Conductor type: N-type
• Resistivity: >50 Ohms/cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
• EPD: N/A
• Package: under 1000 class clean room  in wafer container   

Typical Properties:

• Structure: Cubic, a = 5.6754 A
• Density: 5.323 g/cm3 at room temperature
• Melting Point: 937.4 ^oC
• Thermal Conductivity: 640

Target  A-Z	Crystal Substrate A-Z	Plasma/UO Cleaner	Round Wafer Carriers	Cutting/Dicing Saws	Film Coaters