Ge Substrate (110) 5x5x 0.5 mm, 1 SP, N-type ,Undoped R>50 ohm.cm

Specifications

• Growing Method: CZ
  
• Wafer Size: 5x5x0.5 mm
  
• Surface Polishing: one side optical polished
  
• Orientation: (110)
  
• Surface finish (RMS or Ra) : < 30A
  
• Doping: Undoped
  
• Conductor type: N-type
  
• Resistivity: > 50 Ohms/cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
• Package:   under 1000 class clean room     

Typical Properties:

• Structure: Cubic, a = 5.6754 A
• Density: 5.323 g/cm3 at room temperature
• Melting Point: 937.4 ^oC
• Thermal Conductivity: 640

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