Ge Wafer (100) with major flat <110> 100mm dia x 0.5 mm, 1SP, N type (Sb doped) R:0.1-0.5 ohm.cm - GESba100D05C1BeR01US5

Specification

• Growing Method: CZ
• Orientation: (100) +/- (0.21-0.25) Deg.
• Major Flat: <110> +/- (0.11-0.19) Deg.
• Wafer Size: 100mm dia x  500 microns
• Surface Polishing: One side epi polished
• Surface roughness: < 5 A ( by AFM)
• Doping: Sb Doped
• Conductor type: N-type
• Resistivity: 0.1-0.5 Ohms.cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
• Package:                           under 1000 class clean room     

Typical Properties:

• Structure: Cubic, a = 5.6754 A
• Density: 5.323 g/cm3 at room temperature
• Melting Point: 937.4 ^oC
• Thermal Conductivity: 640

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