Ge Wafer (110) Ga-doped, 2" dia x 0.5 mm, 2SP Resistivity : 0.1-0.5 ohm-cm - GEGae50D05C2R01US

Specification 

• Growing Method: CZ
• Orientation: (110) +/_0.5 Deg.
• Wafer Size: 2" dia x  500 microns
• Surface Polishing: Two sides optical polished
• Surface finish (RMS or Ra) : < 30A
• Doping: Ga-doped
• Conductor type: P-type
• Resistivity: 0.1-0.5 Ohms/cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
• Package: under 1000 class clean room     

Typical Properties:

• Structure: Cubic, a = 5.6754 A
• Density: 5.323 g/cm3 at room temperature
• Melting Point: 937.4 ^oC
• Thermal Conductivity: 640

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