Ge Wafer (111)+/-1.5 degree, Un doped, 2"x0.5 mm, 1SP, R>50 ohm-cm

Ge Wafer Specification

• Growing Method:                   CZ
• Orientation:                            (111) +/-1.5 Deg.
• Wafer Size:                            2" dia x  500 microns  
• Surface Finish(RMS or Ra):   one side epi polished < 8 A ( by AFM)
• Doping:                                 Undoped
• Conductor type:                    N-type
• Resistivity:                              >50  Ohms/cm (If you would like to measure the resistivity accurately, (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
• Package:                           under 1000 class clean room     

Typical Properties:

• Structure:                         Cubic, a = 5.6754 A
• Density:                            5.323 g/cm3 at room temperature
• Melting Point:                    937.4 ^oC
• Thermal Conductivity:         640

Target  A-Z	Crystal Substrate A-Z	Plasma/UO Cleaner	Round Wafer Carriers	Cutting/Dicing Saws	Film Coaters