Ge Wafer ,N-type Undoped (100) 3" dia x 0.5 mm 2 side polished resistivity: >50 ohm-cm

Specification

• Growing Method:             CZ
• Orientation:                    (100) +/_0.5 Deg.
• Wafer Size:                    3" dia x  0.5 mm 
• Surface Polishing:          two sides optical polished
• Surface finish (RMS or Ra) :  < 30A
• Doping:                           Undoped
• Conductor type:             N-type
• Resistivity:                   >50 Ohms/cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
• Package:                           under 1000 class clean room     

Typical Properties:

• Structure:                         Cubic, a = 5.6754 A
• Density:                            5.323 g/cm3 at room temperature
• Melting Point:                    937.4 ^oC
• Thermal Conductivity:         640

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