High Vacuum Plasma-enhanced Chemical Vapor Deposition (CCP type) - VTC-PECVD

• Single-phase 208 - 240 VAC 50 / 60 Hz
• 4000 W 

• One 300 W, 13.56 MHz frequency RF power source with auto coupling.

         

PECVD Growth

• 100 mm Dia. double layer shower head with RF source for 4" wafer
  

• Two precision mass flow controllers (MFCs) for two types of working gas
• Flow rate: 0 – 100 mL/min adjustable on the touch screen control panel
• Motorized butterfly valves allow a stable working deposition pressure from 0.1 torrs to 1 torr
• 

Vacuum Chamber

• Made of 304 stainless steel
• Dimension: Dia 300 mm × 300 m H
• Ultimate vacuum: 6E-7 torr
• Pumping time: <6E-6 torr after 40 min pumping with turbopump
• Leak rate: 3.8E-9 torr L/s
• Viewport: 100 mm dia. glass
• Fast load-lock door for quick sample loadding and retrieval. 

Vacuum Pump

• Turbo Pump: 700 L/s Pfeiffer turbo pump 
• Backing Pump: 240 L/min (4L/s) rotoray vane pump

Sample Stage

• The sample holder is a rotatable and heatable stage made of the ceramic heater with copper cover
• Sample holder size: 100 mm Dia. for. 4" wafer max
• Rotation speed: 1 - 20 rpm adjustable for uniform coating
• The holder temperature is PID controlled from RT to 500 °C max with an accuracy of +/- 1.0 °C 
• Clearance: 15 ~ 65 mm between sample stage and plasma head

• One digital temperature-controlled recirculating water chiller is included. (Click picture to see details)
• Refrigeration range: 5~35 °C
• Flow rate: 16 L/min
• Pump pressure: 14 psi

• 2- 9 channel gas mixing and delivery system is available as an option ( Pic. 1)
• Vapor gas delivery device is available upon request (Pic. 2&3)
• Programmable software for customized recipes is available based on customer design
•  Pic. 1Pic. 2Pic.3

Net Weight of Coater

• 160 kg

Dimensions

Compliance

• CE approval
• NRTL Certification (UL 1450) is available upon request at an extra cost  

Warranty

• One year limited warranty with lifetime support