InAs (100), P Type, Zn doped 10x10 x 0.5 mm, one side polished

• InAs wafer    
• P Type, Zn doped
• Size: 10x10x0.5mm
• Orientation: <100> +/-0.5⁰
•  Polishing: one-side polishd
• Resistivities:  0.0084 ohm-cm
• Packing: in 1000 class clean room with wafer container

Properties

• Growth method: LEC
• Orientation: (100)  +/- 0.5 ^o
• Orientation Flat: SEMI                    
• Doping:  Zn doped
• Conductivity type:  P type
• Carrier Concentration: 5.3E18/ cm³
• Mobility: 126 cm²/V.S  
• Resistivity:  0.0084 ohm-cm
• EPD: 1.2E4 / cm ²

Other GaAs

InSb

Other InAs

InP

GaSb

Wafer Box

Film Coaters

RTP Furnaces