Description
- Growth method LEC
- Orientation (100)± 0.5 Deg
- Orientation Flat N/A
- Doping Sn doped
- Conductivity type N type
- Carrier Concentration (3-10)E17cm3
- Mobility >11000 cm2/V.S
- EPD <15000 / cm 2
- Standard thickness 500 ±20 mm
- Size 10x10 mm
- Polish one-side
Other GaAs |
InSb
|
Other InAs
|
InP |
GaSb
|
Wafer Box
|
Film Coaters
|
RTP Furnaces
|