Description
InP single crystal wafer
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Growing Method: VGF
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Orientation: (100)
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Size: 2" diameter x 0.5 mm
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Doping: S- doped
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Conducting type: S-C-N
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Polish: one side polished
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Resistivity: (1.8-2.0)x10^-3 ohm.cm
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Mobility: 1850-1870 cmE2/V.S
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EPD: <2000 /cmE2
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Carrier Concentration: (1.7-1.9) x10^18 /cm^3
- Ra(Average Roughness) : < 0.4 nm
- EPI ready surface and packing
Other GaAs |
InSb
|
Other InAs
|
InP |
GaSb
|
Wafer Box
|
Film Coaters
|
RTP Furnaces
|