Description
InP single crystal wafer
- Orientation: (111)A
- Size: 2" diameter x 0.35mm
- Doping: undoped
- Conducting type: N Type, Semi-Conducting
- Resistivity: (2.48-3.78)E^-1 ohm.cm
- Carrier Concentration:(4.04-6.72)E15 /c.c.
- Mobility: 3760-4180 cm^2/v.s.
- Polish: one side polished Ra(Average Roughness) : < 0.4 nm
- EPD: unable to measure due to (111)A orientation
- EPI ready surface and packing
Other GaAs |
InSb
|
Other InAs
|
InP |
GaSb
|
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