Description
InP single crystal wafer
- Growing Method: VGF
- Orientation: (111)A
- Size: 2" diameter x 0.3 mm
- Doping: Zn- doped
- Conducting type: S-C-P
- Polish: one side polished
- Resistivity:(3.24-3.29)x10^-1 ohm.cm
- Mobility: 105-110 cm^2/V.S
- EPD: N/A
- Carrier Concerntration:(1.76-1.81) x10^17 /cm^3
- Ra(Average Roughness) : <4 nm
- EPI ready surface and packing
Other GaAs |
InSb
|
Other InAs
|
InP |
GaSb
|
Wafer Box
|
Film Coaters
|
RTP Furnaces
|