Description
- InP single crystal wafer
- Growing Method: VGF
- Orientation: (111)B
- Size: 2" diameter x 0.35 mm
- Doping: S- doped
- Conducting type: S-C-N
- Polish: one side polished
- Resistivity: (1.26-1.40)x10^-3 ohm.cm
- Mobility: (1540-1650) cm^2/v.s
- EPD: N/A
- Carrier Concentration: (2.71-3.24) x10^18 /cm^3
- Surface Roughness: <4 nm
- EPI ready surface and packing
Other GaAs |
InSb
|
Other InAs
|
InP |
GaSb
|
Wafer Box
|
Film Coaters
|
RTP Furnaces
|