InSb (100) 5 x 5 x 0.3 mm, N type, Te doped, 1 side polished

InSb (100) 5 x 5 x 0.3 mm, N type, Te doped, 1 side polished

RM0.00 MYR
RM0.00 MYR
Skip to product information
InSb (100) 5 x 5 x 0.3 mm, N type, Te doped, 1 side polished
  • InSb (100) 5 x 5 x 0.3 mm, N type, Te doped, 1 side polished
InSb (100) 5 x 5 x 0.3 mm, N type, Te doped, 1 side polished

InSb (100) 5 x 5 x 0.3 mm, N type, Te doped, 1 side polished

SKU: insb-100-5-x-5-x-0-3-mm-n-type-te-doped-1-side-polished

Price: RFQ

Description

10x10x0.45 mm  InSb  wafer   (N type, Te doped)

  • Size: 5x5x0.3 mm
  • Orientation: <100> +/-0.5o  with two reference flats
  •  Polishing: one-side side polished ( back side etched )
  • Packing: Sealed under nitrogen with single wafer container  in 1000 class clean room

Properties

  • Growth method: LEC
  • Orientation: (100)  +/- 0.5o                                           
  • Doping: Te doped
  • Conductivity type: N type
  • Carrier Concentration: (0.19- 0.5)E18 @77K
  • Mobility:  >(3.58-5.6)E4 cm2/Vs
  • EPD: <1200 - 1500  / cm 2


Other GaAs


 		InSb

 		Other InAs

 		 InP 


 		GaSb

 		Wafer Box

 Film Coaters

 RTP Furnaces