InSb (111)- A 2" dia x 0.5 mm, Te-doped, N type, 1 side polished

2" InSb wafer (N type, Te-doped)

• Size: 2" dia x 0.5mm  thick with thickness tolerance +/- 25 um
• Orientation: <111>A +/-0.5^o  with two reference flats
• Polishing:  one-side  polished ( back side etched )
• Packing:  Sealed under nitrogen with single wafer container  in 1000 class clean room

Properties

• Growth method: CZ
• Orientation: (111) A +/- 0.5^o
• Orientation Flat: <0-1-1> .<0-11>                      
• Doping: Te-doped
• Conductivity type:  N type
• Resistivity: (1.1-3.3) E-4 ohm.cm
• Carrier Concentration: (1.0E14 - 1.0 E15) cm-3
• Mobility: >E5 cm²/Vs
• EPD: < 1 E3  / cm -2

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