InSb (111)B 2" dia x 0.5 mm, Undoped, N type, one side polished - ISUcB50D05C1US

InSb (111)B 2" dia x 0.5 mm, Undoped, N type, one side polished - ISUcB50D05C1US

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InSb (111)B 2" dia x 0.5 mm, Undoped, N type, one side polished - ISUcB50D05C1US
  • InSb (111)B 2" dia x 0.5 mm, Undoped, N type, one side polished - ISUcB50D05C1US
InSb (111)B 2" dia x 0.5 mm, Undoped, N type, one side polished - ISUcB50D05C1US

InSb (111)B 2" dia x 0.5 mm, Undoped, N type, one side polished - ISUcB50D05C1US

SKU: insb-111b-2-dia-x-0-5-mm-undoped-n-type-one-side-polished-isucb50d05c1us

Price: RFQ

Description

2" InSb  wafer   (N type, undoped)

  • Size: 2" dia x 0.5mm  thick
  • Orientation: <111>B +/-0.5o  with two reference flats
  • Polishing: one side  polished ( back side etched )
  • Packing: Sealed under nitrogen with single wafer container  in 1000 class clean room

Properties

  • Growth method: LEC
  • Orientation: (111)B  +/- 0.5o
  • Orientation: Flat                                                          
  • Doping: Undoped
  • Conductivity type: N type
  • Carrier Concentration: 5E13-3E14 @77K
  • Mobility: >400000 cm^2/V.s   
  • EPD:  <500 cm^-2