LaAlO3, (100) ori. 10x10x1.0 mm substrate, 1 side EPI polished

RM0.00 MYR

Name: LaAlO3, (100) ori. 10x10x1.0 mm substrate, 1 side EPI polished
Brand: MTI
SKU: LAOa101010S1
Availability: OutOfStock

SKU: laalo3-100-ori-10x10x1-0-mm-substrate-1-side-epi-polished

Price: RFQ

LaAlO₃ single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well-suitable for low-loss microwave and dielectric resonance applications. Substrate Specifications: Wafer Size: 10 x 10 x 1.0 mm thickness +/-0.05 mm, Wafer Orientation: (100) +/-0.5 Deg Polishing: One side CMP polished with free sub-surface damage. Surface finish (RMS or Ra) : < 10A Package: Under 1000 class clean room, and in a 100-grade plastic bag in a wafer container. Lattice Constant a=3.792Å Pseudocubic Warning: LaAlO3 crystal has a visible twin on a polished surface, which is of normal nature, please picture below
	Typical Physical Properties
Crystal Structure	Pseudo cubic a=3.792Å
Growth Method	Czochralski
Density	6.52 g/cm³
Melt Point	2080 ^oC
Thermal expansion	10 (x10^-6/ ^oC)
Dielectric Constant	~ 25
Loss Tangent at 10 GHz	~3x10^-4@ 300K , ~0.6 x10^-4@77K
Color and Appearance	Transparent to Brown based on annealing condition. Visible twins on the polished substrate
Chemical Stability	Insoluble in mineral acids at 25 ^oC and soluble in H3PO3 at> 150 ^oC