Lattice matched N-type InGaAs:undoped, on S-doped InP(100) 3"x0.65mm, 1sp - FmInGAonIPa76D065C1US5

3" dia. InP/InGaAs/InP  layers on InP (100) by MOCVD deposition

Substrate:

• N-type S doped InP [100]±0.5°, Nc=~5E18/cc 
• Wafer Size: 3" diameter
• Thickness:650+/- 25um
  
• One side polished, backside etched, US Flats  

EPI Layer 1: 1um thick InP film, n-type Si doped, Nc=~5E15/cc
EPI Layer 2: 3.0±0.5µm thick, lattice matched In0.53Ga0.47As film, n-type undoped, Nc=1E15-1E16/cc                        
EPI Layer 3(top): 1um thick InP film, n-type Si doped, Nc=1E15-1E16/cc