Description
SGGG single crystal, e.g. substituted gadolinium gallium garnet is grown by CZ method . SGGG substrate is excellent for for growing bismuth-substituted iron garnet epitaxial films
- Composition: Gd2.6Ca0.4)Ga4.1Mg0.25Zr0.65O12
- Size: 10 mm x 10 mm x 0.5 mm
- Orientation: (111) +/-0.5°
- Polish: two sides EPI polished
- Surface Roughness: < 10A by AFM 5x5 microm area
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Physical Properties of SGGG |
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Composition |
Gd2.6Ca0.4)Ga4.1Mg0.25Zr0.65O12 |
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Crystal Structure |
Cubic: a =12.497 Å |
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Molecular wDielectric constanteight |
968,096 |
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Melt Point |
~1730 oC |
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Density |
7.09 g/cm3 |
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Hardness |
7.5 (mohs) |
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Refractive index |
1.97 |
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Dielectric constant |
30 |
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Dielectric loss tangent (10 GHz) |
ca. 3.0 * 10_4 |
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Crystal growth method |
Czochralski |
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Crystal growth direction |
<111> |
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XRD |
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| LSAT | LaAlO3 | MgO |
Plasma/UO Cleaner |
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| NdCaAlO4 | NdGaO3 | SrTiO3 |
Round Wafer Carriers |
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| SrLaAlO4 | Other GGG | YSZ | Film Coaters |
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