Si wafer (100), 3 "dia x 0.38 mm, 1sp, P type, B doped, resistivities: 1-10 ohm-cm

Si wafer (100), 3 "dia x 0.38 mm, 1sp, P type, B doped, resistivities: 1-10 ohm-cm

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Si wafer (100), 3 "dia x 0.38 mm, 1sp, P type, B doped, resistivities: 1-10 ohm-cm
  • Si wafer (100), 3 "dia x 0.38 mm, 1sp, P type, B doped, resistivities: 1-10 ohm-cm
Si wafer (100), 3 "dia x 0.38 mm, 1sp, P type, B doped, resistivities: 1-10 ohm-cm

Si wafer (100), 3 "dia x 0.38 mm, 1sp, P type, B doped, resistivities: 1-10 ohm-cm

SKU: si-wafer-100-3-dia-x-0-38-mm-1sp-p-type-b-doped-resistivities-1-10-ohm-cm

Price: RFQ

Description

 Single crystal                Si Conductivity:                P type  ( B doped) Resistivity:                    1~10 ohm-cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument .) Size:                             3" diameter Thickness:                    0.381 +/- 0.025 mm Orientation:                  (100) Polish:                          One side polished Surface roughness:      < 5A Optional:  you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A-Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater