Si Wafer (100) 4 deg. off toward (110), 3"dia x 0.5 mm, 1 sp, N type, P doped,R:10-30 ohm.cm - SIPa76D05C1deg4R10

Si Wafer (100) 4 deg. off toward (110), 3"dia x 0.5 mm, 1 sp, N type, P doped,R:10-30 ohm.cm - SIPa76D05C1deg4R10

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Si Wafer (100) 4 deg. off toward (110), 3"dia x 0.5 mm, 1 sp, N type, P doped,R:10-30 ohm.cm - SIPa76D05C1deg4R10
  • Si Wafer (100) 4 deg. off toward (110), 3"dia x 0.5 mm, 1 sp, N type, P doped,R:10-30 ohm.cm - SIPa76D05C1deg4R10
Si Wafer (100) 4 deg. off toward (110), 3"dia x 0.5 mm, 1 sp, N type, P doped,R:10-30 ohm.cm - SIPa76D05C1deg4R10

Si Wafer (100) 4 deg. off toward (110), 3"dia x 0.5 mm, 1 sp, N type, P doped,R:10-30 ohm.cm - SIPa76D05C1deg4R10

SKU: si-wafer-100-4-deg-off-toward-110-3dia-x-0-5-mm-1-sp-n-type-p-doped-r-10-30-ohm-cm-sipa76d05c1deg4r10

Price: RFQ

Description

 Single crystal                 Si Conductivity:                N type  ( P doped) Resistivity:                   10-30ohm-CM Size:                                3" diameter x  0.5  mm Orientation:                  (100)  4 Deg. Off Toward  (110) Polish:                           One side polished Surface roughness:      < 5A Optional:  you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A-Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater