Description
Specifications of Substrate
- Orientation: <0001> ±30′
- Edge Orientation : <11-20>±1°<10-10>±1°
- Dimension: 2"+/-0.15mm x 0.3 +/-0.05mm
- Polished: one side polished
- Surface Roughness: < 5 A by AFM
Typical Properties of Single Crystal SiC
- Formula weight: 40.10
- Unit Cell: Hexagonal
- Lattice constant: a =3.07 A c = 10.53 A
- Stacking sequence: ABCB (4H)
- Growth Technique: MOCVD
- Polishing: Silicon face EPI- polished
- Band Gap: 3.26eV ( Indirect)
- Conductivity type: N
- TTV/Bow/Warp: <=35 um
- Micropipe Density: <=30 cm^-2
- Resistivity: 0.015~0.5 ohm-cm
- Dielectric Constant: e (11) = e (22) = 9.66 e (33) = 10.33
- Thermal Conductivity @ 300K: 4W / cm . K
- Hardness: 9 Mohs
- Doping level of nitrogen atoms : 10^18-19 cm^-3
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