Description
Silicon on sapphire (SOS) is a hetero-epitaxial process for integrated circuit manufacturing that consists of a thin layer (typically thinner than 0.6 micrometres) of silicon grown on a sapphire (Al 2 O 3 ) wafer. SOS is part of the Silicon on Insulator (SOI) family of CMOS technologies. SOS is primarily used in aerospace and military applications because of its inherent resistance to radiation .
U.S. Dept. of Commerce requires End User Certificate for exporting this product. Oversea end users must file the end user certificate form (click to download) and all sales are subject to get approval by U.S. Dept. of Commerce before shipping. SOS(Silicon on Sapphire) Wafers ( DSP-Double sides polished)
Silicon EPI Layer:
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Silicon Orientation: (100)
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Type, Dopant: Intrinsic type, undoped
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Silicon Thickness: 1.0 um +/- 10%
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Resistivity: > 100 ohm.cm
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Micro-particle density ( for particles > 2 um) < 2/cm^2
Sapphire Wafer:
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R plane -- (1-102) with single flat
Purity: 99.996% -
Wafer size: 100 mm dia x 0.46 mm thickness
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Flat : One flat 32.5mm +/-2.5mm, at 45+/- 1 deg CCW from <C> on <R>
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Front surface: Epi-polished (Ra < 4nm)
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Back surface: Fine ground
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TTV < 15 um, Bow < 20 um, Warp < 20 um, Flatness (TIR) < 12 um, with Laser Mark on wafer back-side, just below the Flat
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