Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.5 um thick,

Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.5 um thick,

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Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.5 um thick,
  • Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.5 um thick,
Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.5 um thick,

Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.5 um thick,

SKU: silicon-on-sapphire-11-02-r-plane-100mm-dia-x-0-46mm-2sp-film-0-5-um-thick

Price: RFQ

Description

 Silicon on sapphire (SOS) is a hetero-epitaxial process for integrated circuit manufacturing that consists of a thin layer (typically thinner than 0.6 micrometres) of silicon grown on a sapphire (Al 2 O 3 ) wafer. SOS is part of the Silicon on Insulator (SOI) family of CMOS technologies. SOS is primarily used in aerospace and military applications because of its inherent resistance to radiation . U.S. Dept. of Commerce requires End User Certificate for exporting this product. Oversea end users must file the end user certificate form (click to download) and all sales are subject to get approval by U.S. Dept. of Commerce before shipping. SOS(Silicon on Sapphire) Wafers ( DSP-Double sides polished) Silicon EPI Layer: Silicon Orientation: (100) Type, Dopant:  Intrinsic type, undoped Silicon Thickness: 0.5 um +/- 10% Resistivity: > 100 ohm.cm Micro-particle density ( for particles > 2 um) < 2/cm^2 Sapphire Wafer: R plane -- (1-102)  with  single flat Purity:  99.996% Wafer size:   100 mm  dia x 0.46 mm thickness Flat : One flat 32.5mm +/-2.5mm, at 45+/- 1 deg CCW from on Front surface: Epi-polished (Ra < = 0.3 nm) Back surface: Optical grade polish TTV < 15 um, Bow < 20 um, Warp < 20 um, Flatness (TIR) < 12 um, with Laser Mark on wafer back-side, just below the Flat Related Products Thin Films  A-Z Crystal wafer A-Z Plasma Cleaner Wafer Containers Dicing saw Film Coater

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