SiO2+Ti+Pt(111) thin film on Si substrate ,2"x0.279mm,1sp P-type B-doped.R:1-20 ohm.cm

Silicon Wafer Specifications:

• Film:         SiO2+Ti+Pt(111) thin film on Si (100) (P-type) substrate ,2"x0.279mm, 1 side polished (1sp)
  • SiO2=300 nm
  • Ti=10 nm
  • Pt(111)=150 nm
• Resistivity:                  1-20 ohm.cm   (If you would like to measure the resistivity accurately, 
                                    please order our Portable 4 Probe Resistivity Testing Instrument.) 
  
• Substrate Size:            2" diameter +/- 0.5 mm x 0.279 mm
• Polish:                        one side polished
• Surface roughness:      < 20 A RMS
  
• Maximum Thermal Budget of Pt film: < 650-700  degree C / 1 hr