TGG Single Crystal Substrate: (111) 10 x 10 x. 0.5mm , 1 SP - TGGc1010S1

TGG Single Crystal Substrate: (111) 10 x 10 x. 0.5mm , 1 SP - TGGc1010S1

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TGG Single Crystal Substrate: (111) 10 x 10 x. 0.5mm , 1 SP - TGGc1010S1
  • TGG Single Crystal Substrate: (111) 10 x 10 x. 0.5mm , 1 SP - TGGc1010S1
TGG Single Crystal Substrate: (111) 10 x 10 x. 0.5mm , 1 SP - TGGc1010S1

TGG Single Crystal Substrate: (111) 10 x 10 x. 0.5mm , 1 SP - TGGc1010S1

SKU: tgg-single-crystal-substrate-111-10-x-10-x-0-5mm-1-sp-tggc1010s1

Price: RFQ

Description

 TGG singlecrystal Terbium Gallium Garne  is an excellent magneto-optical crystal used in various Faraday device s(Rotator and Isolator) in the range of 400nm-1100nm, ( excluding 475 - 500nm.). which can replace YIG crystal Specification Single crystal of TGG Size:   10 mm x 10 mm x 0.5mm Orientation: (111) +/-0.5 o Polish: One sides polished Surface roughness: 10A Typical  Properties Chemical Formula Tb 3 Ga 5 O 12 Lattice Parameter a=12.355Å Growth Method Czocralski Density 7.13g/cm 3 Mohs Hardness 8.0 Melting Point 1725 Refractive Index 1.954 at 1064nm Main Advantage Large Verdet Constant (35 Rad T -1 m -1 ). Low optical losses (<0.1%/cm) High thermal conductivity (7.4W m -1 K -1 ). High laser damage threshold (>1GW/cm 2 ). Main Application Faraday Rotator, Optical Isolator etc Related Products CdWO 4 LSAT LaAlO3 MgO Film Coaters SrLaAlO4 NdCaAlO4 SrTiO3 YSZ Wafer Boxes

Typical  Properties
    
Chemical Formula
Tb3Ga5O12
Lattice Parameter
a=12.355Å
Growth Method
Czocralski
Density
7.13g/cm3
Mohs Hardness
8.0
Melting Point
1725
Refractive Index
1.954 at 1064nm

Main Advantage
Large Verdet Constant (35 Rad T-1m-1).
Low optical losses (<0.1%/cm)
High thermal conductivity (7.4W m-1K-1).
High laser damage threshold (>1GW/cm2).
Main ApplicationFaraday Rotator, Optical Isolator etc

,
Chemical Formula
Tb3Ga5O12
Lattice Parameter
a=12.355Å
Growth Method
Czocralski
Density
7.13g/cm3
Mohs Hardness
8.0
Melting Point
1725
Refractive Index
1.954 at 1064nm
,
     
SrLaAlO4