Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 2" dia x 0.50 mm t, N type ,As-doped, 1 side polished, R:0.001-0.005 ohm.cm - Fm300SOonSIAsa50D05C

Thermal oxide Layer

• Research Grade, about 80 % useful  area
  
• SiO2 layer on 2" Silicon wafer
• Oxide layer thickness: 300 nm ( 3000A) +/-10%
• Refractive index: 1.455

Silicon Wafer Specifications:

• Conductive type:          N type/ As- doped 
• Resistivity:                  0.001-0.005 ohm-cm
• Size:                           50.8 diameter +/- 0.5 mm x 0.50 +/- 0.025 mm
• Orientation:                 (100) +/- 1^o
• Polish:                         one side polished
• Surface roughness, Ra: < 5A (RMS)

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