Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 3"dia x 0.50 mm t,undoped N type, 1SP R:>1000 ohm.cm

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 3"dia x 0.50 mm t,undoped N type, 1SP R:>1000 ohm.cm

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Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 3"dia x 0.50 mm t,undoped N type, 1SP R:>1000 ohm.cm
  • Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 3"dia x 0.50 mm t,undoped N type, 1SP R:>1000 ohm.cm
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 3"dia x 0.50 mm t,undoped N type, 1SP R:>1000 ohm.cm

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 3"dia x 0.50 mm t,undoped N type, 1SP R:>1000 ohm.cm

SKU: thermal-oxide-wafer-300-nm-sio2-layer-on-si-100-3dia-x-0-50-mm-t-undoped-n-type-1sp-r-1000-ohm-cm

Price: RFQ

Description

Thermal oxide Layer

  • Research Grade , about 80 % useful  area
  • SiO2 layer on 3" Silicon wafer
  • Oxide layer thickness: 300 nm   ( 3000A)  +/-10%
  • Refractive index - 1.455

Silicon Wafer Specifications:

  • Conductive type:          N-type/ un-dped 
  • Resistivity:                 >1000 ohm.cm
  • Size:                         3"diameter +/- 0.5 mm x 0.5 mm
  • Orientation:                (100) +/- 1o
  • Polish:                        one side polished

 

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