Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 2SP, R:1-10 ohm-cm - Fm300SOonSIBa100D0525C2R1US

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 2SP, R:1-10 ohm-cm - Fm300SOonSIBa100D0525C2R1US

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Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 2SP, R:1-10 ohm-cm - Fm300SOonSIBa100D0525C2R1US
  • Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 2SP, R:1-10 ohm-cm - Fm300SOonSIBa100D0525C2R1US
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 2SP, R:1-10 ohm-cm - Fm300SOonSIBa100D0525C2R1US

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 2SP, R:1-10 ohm-cm - Fm300SOonSIBa100D0525C2R1US

SKU: thermal-oxide-wafer-300-nm-sio2-layer-on-si-100-4dia-x-0-5-mm-t-p-type-2sp-r-1-10-ohm-cm-fm300soonsiba100d0525c2r1us

Price: RFQ

Description

Thermal oxide 

  • SiO2 layer on 4" Silicon wafer
  • Oxide layer thickness: 300 nm   ( 3000A)  +/-10%
  • Refractive index - 1.455

Silicon Wafer Specifications:

  • Conductive type:          P-type/ B-dped 
  • Resistivity:                 1-10 ohm.cm  (If you would like to measure the resistivity accurately, 
                                      please order our Portable 4 Probe Resistivity Testing Instrument.) 
  • Size:                         4" +/- 0.5 mm x 0.5 mm
  • Orientation:                (100) +/- 1o
  • Polish:                        Two sides  polished
  • Surface roughness, Ra: < 5A (RMS)



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