Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 2SP, R:1-10 ohm-cm - Fm300SOonSIBa100D0525C2R1US

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 2SP, R:1-10 ohm-cm - Fm300SOonSIBa100D0525C2R1US

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Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 2SP, R:1-10 ohm-cm - Fm300SOonSIBa100D0525C2R1US
  • Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 2SP, R:1-10 ohm-cm - Fm300SOonSIBa100D0525C2R1US
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 2SP, R:1-10 ohm-cm - Fm300SOonSIBa100D0525C2R1US

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 2SP, R:1-10 ohm-cm - Fm300SOonSIBa100D0525C2R1US

SKU: thermal-oxide-wafer-300-nm-sio2-layer-on-si-100-4dia-x-0-5-mm-t-p-type-2sp-r-1-10-ohm-cm-fm300soonsiba100d0525c2r1us

Price: RFQ

Description

 Thermal oxide SiO2 layer on 4" Silicon wafer Oxide layer thickness: 300 nm   ( 3000A)  +/-10% Refractive index - 1.455 Silicon Wafer

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