Thermal Oxide Wafer: 500 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, N-type ,P doped 1sp ,0.01-0.1 ohm.cm

Thermal Oxide Wafer: 500 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, N-type ,P doped 1sp ,0.01-0.1 ohm.cm

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Thermal Oxide Wafer: 500 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, N-type ,P doped 1sp ,0.01-0.1 ohm.cm
  • Thermal Oxide Wafer: 500 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, N-type ,P doped 1sp ,0.01-0.1 ohm.cm
Thermal Oxide Wafer: 500 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, N-type ,P doped 1sp ,0.01-0.1 ohm.cm

Thermal Oxide Wafer: 500 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, N-type ,P doped 1sp ,0.01-0.1 ohm.cm

SKU: thermal-oxide-wafer-500-nm-sio2-layer-on-si-100-4dia-x-0-50-mm-t-n-type-p-doped-1sp-0-01-0-1-ohm-cm

Price: RFQ

Description

 Thermal oxide Layer Research Grade , about 80 % useful  area SiO2 layer on 4" Silicon wafer Oxide layer thickness: 500 nm   ( 5000A)  +/-10% Refractive index - 1.455 Silicon Wafer

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