VGF-Ge Wafer(100) 100 mm dia x 0.5 mm, 1SP, P type (Ga doped) R:0.128-0.303 Ohm.cm

Specification

• Growing Method: VGF
• Orientation: (100) +/-0.4 Deg.
• Wafer Size: 100 mm  dia x  500 microns  
• Surface Polishing: One side  polished
• Doping: Ga Doped
• Conductor type: P-type
• Resistivity: 0.128-0.327 Ohm.cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
• Carrier Concentration: (0.98-10.0) x10^16 /c.c
• Mobility: 897-2070 cm^2/Vs
• EPD: <500 /cm^2
• Ra(Average Roughness) : < 0.4 nm
• Package: under 1000 class clean room     

Typical Properties:

• Structure: Cubic, a = 5.6754 A
• Density: 5.323 g/cm3 at room temperature
• Melting Point: 937.4 ^oC
• Thermal Conductivity: 640

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