VGF-Ge Wafer(100) . 100 mmdia x 0.175 mm, 1SP, P type ( Ga doped)

Specification

• Growing Method: VGF
• Orientation: (100) +/-0.5 Deg.
• Wafer Size: 100(+/-0.4) mm  dia x  175(+/-25) microns  
  
• Surface Polishing: One side  polished
• Surface roughness: < 8 A
• Doping: Ga Doped
• Conductor type: P-type
• Resistivity: (0.182-0.327) Ohm.cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
• Carrier Concentration: (0.92-4.13) E16 /c.c
• Mobility: (1520-2090) cm^2/v.s
• EPD: <=500 /cm^2
• Package: under 1000 class clean room     

Typical Properties:

• Structure: Cubic, a = 5.6754 A
• Density: 5.323 g/cm3 at room temperature
• Melting Point: 937.4 ^oC
• Thermal Conductivity: 640

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