VGF-Ge Wafer(100) . 100 mmdia x 0.175 mm, 2SP, P type ( Ga doped) R:0.1-0.182 ohm.cm

Specification

• Growing Method: VGF
• Orientation: (100) +/-0.5 Deg.
• Wafer Size: 100(+/_0.4) mm  dia x  175(+/_25) microns
  
• Surface Polishing: Both  sides  polished
• Surface roughness: < 8 A ( by AFM)
• Doping: Ga Doped
• Conductor type: P-type
• Resistivity: 0.51-0.182 ohm.cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.)
• Carrier Concentration: (0.188-1.13) x10^17
  
• Mobility: 1100-1830 cm^2/v.s.
  
• EPD: <=500 /cm^2 
• Ra(Average Roughness) : < 0.4 nm
• Package: under 1000 class clean room     

Typical Properties:

• Structure: Cubic, a = 5.6754 A
• Density: 5.323 g/cm3 at room temperature
• Melting Point: 937.4 ^oC
• Thermal Conductivity: 640

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